ion-beam epitaxy

ion-beam epitaxy
jonpluoštė epitaksija statusas T sritis radioelektronika atitikmenys: angl. ion-beam epitaxy vok. Ionenstrahlepitaxie, f rus. ионно-пучковая эпитаксия, f pranc. épitaxie par faisceau ionique, f

Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“. . 2000.

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  • Ion Beam Mixing — is a process for adhering two multilayers, especially a substrate and deposited surface layer. The process involves bombarding layered samples with doses of ion radiation in order to promote mixing at the interface, and generally serves as a… …   Wikipedia

  • Chemical beam epitaxy — (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular… …   Wikipedia

  • Ion implantation — is a materials engineering process by which ions of a material can be implanted into another solid, thereby changing the physical properties of the solid. Ion implantation is used in semiconductor device fabrication and in metal finishing, as… …   Wikipedia

  • Ionenstrahlepitaxie — jonpluoštė epitaksija statusas T sritis radioelektronika atitikmenys: angl. ion beam epitaxy vok. Ionenstrahlepitaxie, f rus. ионно пучковая эпитаксия, f pranc. épitaxie par faisceau ionique, f …   Radioelektronikos terminų žodynas

  • jonpluoštė epitaksija — statusas T sritis radioelektronika atitikmenys: angl. ion beam epitaxy vok. Ionenstrahlepitaxie, f rus. ионно пучковая эпитаксия, f pranc. épitaxie par faisceau ionique, f …   Radioelektronikos terminų žodynas

  • épitaxie par faisceau ionique — jonpluoštė epitaksija statusas T sritis radioelektronika atitikmenys: angl. ion beam epitaxy vok. Ionenstrahlepitaxie, f rus. ионно пучковая эпитаксия, f pranc. épitaxie par faisceau ionique, f …   Radioelektronikos terminų žodynas

  • ионно-пучковая эпитаксия — jonpluoštė epitaksija statusas T sritis radioelektronika atitikmenys: angl. ion beam epitaxy vok. Ionenstrahlepitaxie, f rus. ионно пучковая эпитаксия, f pranc. épitaxie par faisceau ionique, f …   Radioelektronikos terminų žodynas

  • crystal — crystallike, adj. /kris tl/, n., adj., v., crystaled, crystaling or (esp. Brit.) crystalled, crystalling. n. 1. a clear, transparent mineral or glass resembling ice. 2. the transparent form of crystallized quartz. 3. Chem., Mineral. a solid body… …   Universalium

  • Crystal — /kris tl/, n. 1. a city in SE Minnesota, near Minneapolis. 25,543. 2. a female given name. * * * I Any solid material whose atoms are arranged in a definite pattern and whose surface regularity reflects its internal symmetry. Each of a crystal s… …   Universalium

  • Thin film — A thin film is a layer of material ranging from fractions of a nanometer (monolayer) to several micrometers in thickness. Electronic semiconductor devices and optical coatings are the main applications benefiting from thin film construction. A… …   Wikipedia

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